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GaN

First 1 mΩ On-Resistance GaN FET

EPC is launching a 100 V, 1 mOhm EPC2361, the lowest on-resistance GaN FET on the market. The FET doubles the power density of its previous products. The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package…