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EPC Space Unveils 300V Rad-Hard GaN FET for Next-Gen Satellite Power Systems

As satellites push toward higher voltages and greater power density, EPC Space is stepping up with a new gallium nitride solution designed specifically for these advanced missions. The company has announced the release of the EPC7030MSH, a 300 V radiation-hardened (RH) GaN FET engineered for high-performance space applications, including satellite power plants and electric propulsion systems.

As satellites push toward higher voltages and greater power density, EPC Space is stepping up with a new gallium nitride solution designed specifically for these advanced missions. The company has announced the release of the EPC7030MSH, a 300 V radiation-hardened (RH) GaN FET engineered for high-performance space applications, including satellite power plants and electric propulsion systems.

As space platforms evolve to accommodate higher-voltage buses—driven by rising power demands and innovations in solar array tech—EPC Space is delivering a timely answer. The EPC7030MSH FET is optimized for front-end power conversion where compact size, thermal performance, and radiation tolerance are critical.

According to EPC Space CEO Bel Lazar, “The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers.”

What sets this device apart is its class-leading combination of low RDS(on) and gate charge (QG), which enables the highest current rating among all 300 V rad-hard GaN FETs available today. This makes it a prime candidate for demanding DC-DC converter designs operating in tight thermal envelopes and exposed to radiation-heavy environments.

Key Specs and Highlights:

  • Voltage Rating: 300 V operation at LET = 63 MeV, 250 V at LET = 84.6 MeV

  • Performance Edge: Lowest RDS(on) and QG in its class

  • Power Handling: Highest current capability in the 300 V rad-hard GaN category

  • Packaging: FSMD-M hermetic surface-mount, optimized for conduction cooling and enhanced creepage distance

  • Driver Compatibility: Works with existing GaN gate driver solutions

Engineered for:

  • Satellite front-end DC-DC converters

  • Power conversion systems on high-voltage distribution buses

  • Compact, efficient switching in electric propulsion platforms

The EPC7030MSH is the latest in EPC Space’s ongoing mission to redefine power performance in space. Built to exceed the capabilities of traditional silicon-based RH MOSFETs, it offers better efficiency, thermal performance, and size reductions—key attributes for the next generation of satellite architectures.

To learn more about the EPC7030MSH and explore EPC Space’s full range of space-grade GaN solutions, visit:vhttps://epc.space or https://epc-co.com

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