First 1 mΩ On-Resistance GaN FET

EPC is launching a 100 V, 1 mOhm EPC2361, the lowest on-resistance GaN FET on the market. The FET doubles the power density of its previous products.

The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package with an exposed top and a tiny 3 mm x 5 mm footprint. The maximum RDS(on) x Area of the EPC2361 is 15 mΩ*mm2 – over five times smaller than comparable 100 V silicon MOSFETs.

With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, reducing energy consumption and heat dissipation. This breakthrough is particularly significant for high-power PSU AC-DC synchronous rectification, high-frequency DC-DC conversion for data centers, motor drives for eMobility, robotics, drones, and solar MPPTs.

The EPC90156 development board is a half bridge featuring the EPC2361 GaN FET, designed for 100 V maximum device voltage and xx A maximum output current. This board aims to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2″ x 2″ (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.

The EPC2361 costs $4.60 each in 3 Ku volumes, and the EPC90156 development board costs $200.00.

The product is available through any of EPC’s distribution partners or ordered directly from the EPC website.

Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions. You can find a cross-reference tool at:

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