Circuit board simplifies gate driver evaluation

October 3, 2016

The DVRFD615X2 high speed MOSFET demonstration board has been announced by IXYS Corporation, by its IXYS Colorado division. The DVRFD615X2 is a general purpose circuit board designed to simplify the evaluation of the IXRFD615X2 dual high speed MOSFET gate driver, and to provide a building block for power circuit development. The IXRFD615X2 gate driver is factory installed on the demonstration board and is fully tested. The board configuration allows mounting of…


Vishay’s New 650 V Fast Body Diode MOSFETs

Vishay mosfe L
May 9, 2016

Vishay expanded its portfolio of fast body diode n-channel power MOSFETs with the introduction of new 650 V EF Series devices. Augmenting the company’s 600 V offering, the Vishay Siliconix SiHx21N65EF, SiHx28N65EF, and SiHG33N65EF provide additional voltage headroom for industrial, telecom, and renewable energy applications when desired. Built on E Series superjunction technology, the 650 V fast body diode MOSFETs released today feature a 10x lower reverse recovery charge (Qrr)…


900V SiC, Cree MOSFET stocked by Mouser

C3M,900 SiC MOSFET, Cree, Mouser
June 18, 2015

Mouser Electronics is stocking the C3M family of silicon carbide power MOSFETs from Cree. The latest breakthrough in silicon carbide (SiC) power device technology and the industry’s first SiC 900V MOSFET platform, the C3M Power MOSFETs are optimized for high-frequency power electronic applications. The new 900V platform enables smaller and higher-efficiency next-generation power conversion systems while reducing system cost versus silicon-based solutions. The Cree C3M SiC power MOSFETs, available from…


Intersil rad-hard ICs on board NASA’s Orion spacecraft

16 of Intersil’s radiation-hardened ICs were on board the maiden voyage of NASA’s Orion spacecraft, also known as the uncrewed Exploration Flight Test 1, on 5th December 2014. The Orion spacecraft is designed to go where no man has gone before, exploring and collecting asteroid samples, a future planned robotic mission to redirect an asteroid to orbit the moon, and the long sought after manned mission to Mars. Intersil’s rad-hard ICs are…

June 17, 2015

OptiMOS™ 300 V Offers High Efficiency and New Design Possibilities in Hard Switching Applications

Infineon Technologies extends its medium voltage MOSFET portfolio with OptiMOS TM300 V, setting a new standard in the Power MOSFET market. In doing so, the company confirms its position as market leader enabling energy efficient solutions in applications such as telecom systems, uninterruptible power supplies (UPS), motor control, industrial power supplies and DC/AC inverters.  The new OptiMOS 300 V helps system designers to increase power density and reduce cost with the…

June 2, 2015

New Vishay Intertechnology 20 V Chipscale MOSFET Saves Space, Extends Battery Usage in Ultraportable Applications

May 25, 2015

Vishay Intertechnology, Inc. introduced a new TrenchFET® 20 V n-channel MOSFET designed to save space, decrease power consumption, and extend battery usage in wearable devices, smartphones, tablets, and solid-state drives. Offered in a chipscale MICRO FOOT® package with an ultra-low 0.54 mm maximum height, the Vishay Siliconix Si8410DB provides the industry’s lowest on-resistance for any 20 V device in the compact 1 mm square footprint. Optimized for use as a…