Cambridge GaN Devices Unveils High-Power GaN Technology for EV Inverters

The electric vehicle (EV) market is on the cusp of a major shift as Cambridge GaN Devices (CGD) introduces a new 100kW+ Combo ICeGaN® technology—a solution designed to improve inverter efficiency while cutting costs. By combining ICeGaN gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with insulated-gate bipolar transistors (IGBTs) in a single module, CGD is aiming to disrupt an EV inverter market worth over $10 billion.

For years, EV inverters have primarily relied on two choices:

• IGBTs, which are affordable but inefficient at light loads
• Silicon carbide (SiC) devices, which deliver high efficiency but come at a steep price

CGD’s new Combo ICeGaN technology offers a hybrid solution that merges the cost-effectiveness of IGBTs with the performance advantages of GaN, making fast charging and longer range more accessible without the price premium of SiC alternatives.

A Smarter Approach to EV Power

The parallel combination of GaN and IGBT creates a dynamic system that intelligently distributes power based on load conditions. At low currents, ICeGaN switches dominate, delivering low conduction and switching losses for superior efficiency. At high currents, the IGBTs take over, providing robust saturation currents and handling higher temperatures effectively. The system also adapts based on temperature—IGBTs conduct more at high temperatures, while ICeGaN takes on more current at lower temperatures.

This approach leverages the strengths of both devices, improving power efficiency, reliability, thermal stability, and cost-effectiveness in high-power EV inverters.

A Cost-Effective Alternative to Silicon Carbide

The traction inverter market, a critical component in EV powertrains, has been largely dependent on SiC-based solutions due to their efficiency. However, SiC technology remains expensive, limiting its adoption in mass-market electric vehicles.

By integrating GaN and IGBTs, CGD’s Combo ICeGaN technology provides a significantly lower-cost alternative while maintaining comparable efficiency. This solution allows automakers to reduce costs without sacrificing performance, making high-efficiency inverters more accessible across the industry.

Driving EV Innovation with a Hybrid Approach

Current EV inverters either use IGBTs, which are low-cost but inefficient at light loads, or SiC devices, which are highly efficient but expensive. The Combo ICeGaN solution bridges this gap, keeping costs down while maintaining high efficiency at both light and full loads. This means EVs can achieve faster charging times and extended driving range without the premium cost associated with SiC-based solutions.

The combination of ICeGaN and IGBT technologies allows for optimized switching performance, better thermal management, and improved overall system reliability. ICeGaN excels at light-load efficiency and high-speed switching, while IGBTs handle full load and surge conditions effectively. This hybrid approach also benefits from the on-chip intelligence of GaN and the avalanche capability of IGBTs, enhancing system safety and durability.

CGD has already partnered with Tier One automotive suppliers and EV manufacturers to integrate this technology into next-generation EV powertrains. The company expects to demonstrate working prototypes of Combo ICeGaN by the end of 2025, paving the way for mass production in the coming years.

What’s Next for Combo ICeGaN?

CGD is preparing to showcase the Combo ICeGaN technology at the Applied Power Electronics Conference (APEC) in Atlanta from March 16-20, 2025, at Booth 2039. The company is focused on refining and scaling this solution to meet the growing demand for efficient and cost-effective EV inverters.

As the EV industry pushes for higher efficiency and affordability, CGD’s GaN-IGBT hybrid technology could become a key enabler of next-generation electric vehicles, offering automakers a practical alternative to expensive SiC-based inverters while maintaining the high-performance standards required for modern EV powertrains.