New 1700 V SiC MOSFETs Address High-Power Conversion Challenges

As the demand for high-efficiency, medium-voltage power conversion grows, engineers face challenges balancing performance, system size, and cost. SemiQ, a global supplier of advanced silicon carbide (SiC) solutions, is meeting this need with its new family of 1700 V SiC MOSFETs. Designed for high-performance applications such as photovoltaic and wind inverters, energy storage systems, electric vehicle (EV) charging, and industrial power supplies, these MOSFETs offer a path to higher power densities and more compact system designs.

The Challenge: High Power Conversion at Scale

High power applications such as renewable energy systems and EV infrastructure require components capable of operating under demanding conditions without compromising efficiency or reliability. These systems must deliver low losses, high thermal stability, and long-term performance. Traditional silicon-based solutions often fall short of meeting these requirements, particularly at medium-voltage levels where power densities are critical.

SemiQ’s new QSiC™ 1700 V switching planar D-MOSFETs address these challenges by providing high-speed switching, low losses, and robust operation at temperatures of up to 175°C.

A Solution Built for Demanding Applications

The QSiC 1700 V MOSFETs are designed to enable compact, scalable designs without sacrificing performance. Key to this is the reliable body diode, high voltage capability, and rigorous testing standards, including operation beyond 1900 V and UIL avalanche testing at 600 mJ.

These devices are available in multiple formats to suit different design needs:

• Bare Die Form: GP2T030A170X
• 4-Pin TO-247-4L-Packaged Discrete: GP2T030A170H
• Automotive-Qualified Versions: AS2T030A170X and AS2T030A170H

The bare die and packaged options provide flexibility for applications ranging from photovoltaic inverters and EV chargers to industrial induction heating and welding systems.

Enhanced Efficiency and Reliability

The QSiC MOSFETs deliver low switching and conduction losses, helping reduce overall system power consumption. With low capacitance and a rugged gate oxide, they ensure long-term reliability and high-speed operation. All components undergo wafer-level burn-in (WLBI) testing to eliminate weak oxide devices, further enhancing their reliability.

Simplified System Design with Power and Half-Bridge Modules

To make integration easier for engineers, SemiQ offers three modules as part of the 1700 V family:

• 62 mm Half-Bridge Module: Housed in an S3 package with an aluminum nitride (AIN) insulated baseplate, ideal for large-scale industrial applications.
• SOT-227 Power Modules: Available in two configurations, these modules are designed for direct mounting to heatsinks, offering easy installation and improved thermal management.

Key Specifications

These devices are optimized for high-power conversion, with notable specifications including:

• Power Dissipation: 564 W (bare die and TO-247-4L) and up to 2113 W (half-bridge module)
• Continuous Drain Current: Up to 123 A (SOT-227) and 397 A (half-bridge module)
• Low Gate Threshold Voltage: 2.7 V at 25°C (bare die and discrete package)
• Fast Reverse Recovery Time: 17 ns for improved switching efficiency

Automotive Applications on the Horizon

SemiQ’s AEC-Q101-qualified versions of the MOSFETs are designed to meet the rigorous demands of automotive applications, including body electronics, in-vehicle infotainment, advanced driver assistance systems (ADAS), and electric vehicle power systems.

Why This Matters

By addressing the key pain points in medium-voltage power conversion—such as system size, thermal performance, and switching efficiency—SemiQ’s 1700 V SiC MOSFETs offer design engineers the flexibility and reliability they need to develop next-generation energy solutions. As the world transitions toward greener, high-efficiency power systems, these components will play a critical role in enabling that change.

For more information, visit SemiQ.com to explore specifications, request samples, or inquire about volume pricing.

Download datasheets for the 1700 V MOSFETs and modules via the product page.