The University of Surrey tackled a problem that plagued source-gated transistors (SGT). SGTs are often not used because of how their performance changes with temperature. Researchers developed a new design for the transistor part called the source, adding very thin layers of insulating material at the source contact and changing the way electric charges flow.
They used a semiconductor material called IGZO or indium-gallium-zinc oxide to create the next generation of source-gated transistors. Through nanoscale contact engineering, they achieved more stable transistors with temperature than previous attempts. Temperature stability wasn’t the only benefit. They also use low power, producing high signal amplification, and are reliable under different conditions.
A source-gated transistor (SGT) combines a thin-film transistor and a carefully engineered metal-semiconductor contact. SGTs are suitable for large-area electronics and are promising for medicine, engineering, and computing applications. IEEE Transactions published the study on Electron Devices.