transistors

SAN JOSE, CALIF. – May 7, 2024 Power Integrations (NASDAQ: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced an agreement to acquire the assets of Odyssey Semiconductor…

TSMC just announced its 1.6nm-class process technology today, an A16 manufacturing process that is the company's first Angstrom-class production node. Expectations are that it will outperform its predecessor, N2P, significantly.  The…

Substrate materials play an essential role in information processing. Using advanced imaging, a research team led by Penn State found that substrate material (also known as wafers) responds to changes in electricity, like the semiconductor…

EPC is launching a 100 V, 1 mOhm EPC2361, the lowest on-resistance GaN FET on the market. The FET doubles the power density of its previous products. The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package…

Coal, although abundant in the U.S., has a bad reputation based on its use as a fossil fuel. However, joint research from the University of Illinois Urbana-Champaign, the National Energy Technology Laboratory, Oak Ridge National Laboratory,…

Researchers from NIMS and the Tokyo University of Science claim that they have developed the fastest electric double-layer transistor using a highly ion conductive ceramic thin film and a diamond thin film. The transistor could be used to…

Two new papers published by the Cockrell School of Engineering’s Chandra Family of Electrical and Computer Engineering provide blueprints for improvements in semiconductor technology and building blocks for the next generation of computers…

Microchips must become smaller, faster, and energy efficient to keep pace with the ever-larger and more complex data sets to store, search, and analyze. Ferroelectric field effect transistors (FE-FETs) are a potential solution. FE-FETs…

China’s gallium nitride (GaN) Innoscience is under investigation by the U.S. International Trade Commission (USITC) for an I.P. patent dispute with U.S. competitor Efficient Power Conversion (EPC). Innoscience was accused of infringing on…

The University of Surrey tackled a problem that plagued source-gated transistors (SGT). SGTs are often not used because of how their performance changes with temperature. Researchers developed a new design for the transistor part called the…