IR’s 25V IRFH4257D FastIRFET™ in 4×5 PQFN Power Block Package Offers High Density, Compact Solution for DC-DC Applications
International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of the IRFH4257D FastIRFET™ dual power MOSFET housed in a high performance 4×5 PQFN power block package. The new package option expands the power block family’s capability to lower power for compact designs in 12V input DC-DC synchronous buck applications including advanced telecom and netcom equipment,servers, graphic cards, desktop, Ultrabook and notebook computers.
The IRFH4257D features IR’s latest generation silicon and proprietary packaging technology which offers excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg). These features deliver superior power density and lower switching losses in a compact 4×5 power block.
“As with all of IR’s FastIRFET™ devices, the IRFH4257D works with any controller or driver to offer flexibility while delivering higher current, efficiency and frequency capability in single phase or multiphase applications. Now, with the addition of the IRFH4257D, designers have the option to choose a 4×5 or 5×6 PQFN to suit their design requirements,” said Stephane Ernoux, Director of Marketing, IR’s Power Management Devices Business Unit.
The IRFH4257D is qualified to industrial grade and moisture sensitivity level 1 (MSL1), and features an environmentally friendly, lead-free and RoHS compliant bill of materials.
Specifications
| Part Number | PQFN Package size |
Current rating |
Typ. / Max RDSon @ 4.5V |
QG typical @ 4.5V (nC) |
QGD typical @ 4.5V (nC) |
| IRFH4257D | 4×5 | 25A | 3.7 / 4.6 1.65 / 2.1 |
10 23 |
3.4 7.6 |
