Engineering 101

Samsung Develops First 12nm-Class DDR5 DRAM

Samsung Electronics Co. announced the development of a 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology. The company also announced the completion of product evaluation for compatibility with AMD. Samsung claims it has exceptional performance and power efficiency and targets next-generation computing, data centers, and AI-driven systems.

The technology features a new high-κ material that increases cell capacitance and a proprietary design technology that improves critical circuit characteristics. The new DRAM features the industry’s highest die density, enabling a 20 percent gain in wafer productivity. They expect the  12nm-class DRAM to help unlock speeds of up to 7.2 gigabits per second (Gbps). This translates into processing two 30 gigabyte (GB) UHD movies in just one second.

Mass production will begin in 2023; Samsung plans to broaden its DRAM lineup built on this cutting-edge 12nm-class process technology into a wide range of market segments.

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