JEDEC Wide Bandgap Power Semi Committee Publishes Documents on Reliability and Testing of Silicon Carbide (SiC) MOSFETs
JEDEC Solid State Technology Association announced the publication of JEP194: Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs, JEP195: Guideline for Evaluating Gate Switching Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion, and JEP192: Guidelines for Gate Charge (QG) Test Method for SiC MOSFET. JEDEC’s JC-70.2 Silicon Carbide Subcommittee developed the documents. Download for free from the JEDEC website.
The three documents focus on the reliability and testing of SiC MOSFETs. JEP194, for example, establishes procedures for the evaluation of the reliability of gate oxide, including time-dependent dielectric breakdown (TDDB) testing and results interpretation. JEP195 addresses the SiC MOSFET-specific phenomenon called gate switching instability and includes test and measurement routines to evaluate parametric drift and its effect on device performance. JEP192 describes the test method for gate charge of SiC MOSFETs that considers unique performance attributes of SiC MOSFETs.
The document arms SiC device manufacturers and users with guidelines for evaluation and demonstration of the long-term reliability of gate oxide.
