ON Semiconductor Unveils Full Portfolio of Double Data Rate (DDR) Termination Regulators

Latest high performance integrated solutions deliver effective sourcing/sink current limiting and remote sensing functions for smartphone, consumer, computing and automotive applications

ON Semiconductor Unveils Full Portfolio of Double Data Rate (DDR) Termination RegulatorsON Semiconductor, driving energy efficiency innovations, has further strengthened its low drop-out (LDO) linear voltage regulator portfolio with the introduction a series of new high performance devices to support double data rate (DDR) memory. The NCP51200, NCP51400, NCP51510, and NCP51199 feature built in Power MOSFETS and are targeted at a wide variety of applications in the computing, data networking, industrial and handheld consumer markets for specific applications such as SDRAM DIMM memories, servers, routers, smartphones, tablet computer platforms, set top boxes, smart TVs, printers, and PC/laptop motherboards. AEC−Q100 qualified versions are also available for automotive applications including embedded GPS mapping systems, Infotainment, and Wifi and Bluetooth communications.

These high performance LDOs support DDR1, DDR2, DDR3, LPDDR3, DDR4 and LPDDR4 standards with termination voltages (VTT) down to 500 millivolts (mV). Each is capable of actively sourcing and sinking a full 2.0 amps (A) when used with DDR4 and LPDDR4. Additionally, the NCP51145 can support up to 1.2A when used with DDR4 and LPDDR4. The NCP/NCV51199 can source and sink 2.0 A and 1.5 A currents for DDR2 and DDR3 respectively, while the NCP51200 and NCP51510 are specified for 3 A peak current operation and support remote sensing. These highly integrated DDR termination LDOs also benefit from soft-start, on-chip thermal shutdown and (for some devices) under-voltage lockout mechanisms. Each device has a high-speed differential amplifier which provides ultra-fast response to both line voltage and load current transients. All of these devices are also compatible with DDR1 and DDR2 allowing for easy upgrades to newer DDR memory. A temperature range of -40 °C to +125 °C is specified, with an extended temperature range of +150 °C offered for automotive versions.

“There has been a broad expansion of DDR memory into many non-traditional products as connectivity and the Internet of Things (IoT) force increased data communication,” said Simon Keeton, vice president Integrated Circuit Products at ON Semiconductor. “We now offer a comprehensive portfolio of game-changing devices for the entire DDR market that are suitable for new design projects, as well as serving as drop-in replacements for existing devices; but with the higher degree of performance to allow for future memory upgrades. The NCP51400 and NCP51510 are highly advanced ICs with the capability to support next generation DDR technologies as they arrive, while the NCP51145 combines superior performance with attractive price points. Furthermore, we have automotive qualified (AEC-Q100) versions to enable the latest Infotainment and Safety Systems to keep pace with the data demands new car customers expect.”

Packaging and Pricing

Within the expanded family of 15 NCP51xxx LDO solutions are three different package offerings including an 8-pin SOIC-EP, an 8-pin 2×2 mm DFN, and a 10-pin 3×3 mm DFN package. Prices range from $0.07 to $0.195 per unit in 3,000 unit volumes.

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